Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
Article
Article Title | Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer |
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ERA Journal ID | 994 |
Article Category | Article |
Authors | Nie, Tian-Xiao (Author), Lin, Jin-Hui (Author), Chen, Zhi-Gang (Author), Shao, Yuan-Min (Author), Wu, Yue-Qin (Author), Yang, Xin-Ju (Author), Fan, Yong-Liang (Author), Jiang, Zui-Min (Author) and Zou, Jin (Author) |
Journal Title | Journal of Applied Physics |
Journal Citation | 110 (11) |
Number of Pages | 5 |
Year | 2011 |
Place of Publication | United States |
ISSN | 0021-8979 |
1089-7550 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.3665398 |
Web Address (URL) | http://aip.scitation.org/doi/10.1063/1.3665398 |
Abstract | A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 C. After annealing the sample in an oxygen atmosphere at 1000 C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration. |
Keywords | as-grown; Ge diffusion; Ge dots; Ge quantum dot; Ge-segregation; growth mechanisms; oxygen atmosphere; Si capping layer; Stranski-Krastanov mode; thermally oxidized; two layers; single element semiconducting materials; semiconductor devices and integrated circuits; chemical products generally |
ANZSRC Field of Research 2020 | 340399. Macromolecular and materials chemistry not elsewhere classified |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Fudan University, China |
University of Queensland | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q418z/thermally-oxidized-formation-of-new-ge-dots-over-as-grown-ge-dots-in-the-si-capping-layer
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