Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
Article
Article Title | Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer |
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ERA Journal ID | 994 |
Article Category | Article |
Authors | Nie, Tian-Xiao (Author), Lin, Jin-Hui (Author), Chen, Zhi-Gang (Author), Shao, Yuan-Min (Author), Wu, Yue-Qin (Author), Yang, Xin-Ju (Author), Fan, Yong-Liang (Author), Jiang, Zui-Min (Author) and Zou, Jin (Author) |
Journal Title | Journal of Applied Physics |
Journal Citation | 110 (11) |
Article Number | 114304 |
Number of Pages | 5 |
Year | 2011 |
Publisher | AIP Publishing |
Place of Publication | United States |
ISSN | 0021-8979 |
1089-7550 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.3665398 |
Web Address (URL) | http://aip.scitation.org/doi/10.1063/1.3665398 |
Abstract | A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 C. After annealing the sample in an oxygen atmosphere at 1000 C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration. |
Keywords | as-grown; Ge diffusion; Ge dots; Ge quantum dot; Ge-segregation; growth mechanisms; oxygen atmosphere; Si capping layer; Stranski-Krastanov mode; thermally oxidized; two layers; single element semiconducting materials; semiconductor devices and integrated circuits; chemical products generally |
Contains Sensitive Content | Does not contain sensitive content |
ANZSRC Field of Research 2020 | 340399. Macromolecular and materials chemistry not elsewhere classified |
Public Notes | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Appl. Phys. 110, 114304 (2011) and may be found at https://doi.org/10.1063/1.3665398. |
Byline Affiliations | Fudan University, China |
University of Queensland | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q418z/thermally-oxidized-formation-of-new-ge-dots-over-as-grown-ge-dots-in-the-si-capping-layer
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