Observations of a metal-insulator transition and strong surface states in Bi2-x Sbx Se3 thin films
Article
Article Title | Observations of a metal-insulator transition and strong surface states in Bi2-x Sbx Se3 thin films |
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ERA Journal ID | 4865 |
Article Category | Article |
Authors | Zhang, Cheng (Author), Yuan, Xiang (Author), Wang, Kai (Author), Chen, Zhi-Gang (Author), Cao, Baobao (Author), Wang, Weiyi (Author), Liu, Yanwen (Author), Zou, Jin (Author) and Xiu, Faxian (Author) |
Journal Title | Advanced Materials |
Journal Citation | 26 (41), pp. 7110-7115 |
Number of Pages | 6 |
Year | 2014 |
Publisher | John Wiley & Sons |
Place of Publication | Germany |
ISSN | 0935-9648 |
1521-4095 | |
Digital Object Identifier (DOI) | https://doi.org/10.1002/adma.201402299 |
Web Address (URL) | http://onlinelibrary.wiley.com/doi/10.1002/adma.201402299/epdf |
Abstract | A systematic study of Raman and electric transport measurements on Bi2-xSbxSe3 thin films Bi2-xSbx Se3 thin films were grown on freshly cleaved mica. The Bi/Sb ratio was determined by controlling the temperatures of the Bi and Sb cells. In order to reduce the Se vacancies, the thin film growth was maintained under Se-rich conditions with the substrate temperature set at 200 °C. The thickness of the films was fixed at 8 QL by controlling the growth time. The topography of grown films was examined by AFM in tapping mode, and the film thickness was determined by scanning a scratch deliberately made on as-grown thin films. The doping concentrations were determined by energy dispersive spectroscopy through TEM and X-ray photoelectron spectroscopy. Raman data were obtained at room temperature with a spectrometer with a 514.5 nm laser. Subsequently, thin films were etched into 1 mm wide Hall bars by Ar plasma etching. The results demonstrate a feasible approach to suppressing the bulk influence and manipulating the band structure while maintaining the topological non-trivial surface in the Bi2-xSbxSe 3 system. |
Keywords | as-grown thin films; doping concentration; electric transport measurements; freshly cleaved mica; room temperature; substrate temperature; systematic study; thickness of the film; minerals; semiconducting materials; compound semiconducting materials; semiconductor devices and integrated circuits; chemistry; physical properties of gases, liquids and solids; materials science |
ANZSRC Field of Research 2020 | 349999. Other chemical sciences not elsewhere classified |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Fudan University, China |
University of Queensland | |
Southwest Jiaotong University, China | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q4173/observations-of-a-metal-insulator-transition-and-strong-surface-states-in-bi2-x-sbx-se3-thin-films
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