Gate-controlled surface conduction in Na-doped Bi2Te3 topological insulator nanoplates
Article
Article Title | Gate-controlled surface conduction in Na-doped Bi2Te3 topological insulator nanoplates |
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ERA Journal ID | 1369 |
Article Category | Article |
Authors | Wang, Yong (Author), Xiu, Faxian (Author), Cheng, Lina (Author), He, Liang (Author), Lang, Murong (Author), Tang, Jianshi (Author), Kou, Xufeng (Author), Yu, Xinxin (Author), Jiang, Xiaowei (Author), Chen, Zhigang (Author), Zou, Jin (Author) and Wang, Kang L. (Author) |
Journal Title | Nano Letters: a journal dedicated to nanoscience and nanotechnology |
Journal Citation | 12 (3), pp. 1170-1175 |
Number of Pages | 6 |
Year | 2012 |
Place of Publication | United States |
ISSN | 1530-6984 |
1530-6992 | |
Digital Object Identifier (DOI) | https://doi.org/10.1021/nl202920p |
Web Address (URL) | http://pubs.acs.org/doi/pdf/10.1021/nl202920p |
Abstract | Exploring exciting and exotic physics, scientists are pursuing practical device applications for topological insulators. The Dirac-like surface states in topological insulators are protected by the time-reversal symmetry, which naturally forbids backscattering events during the carrier transport process, and therefore offers promising applications in dissipationless spintronic devices. Although considerable efforts have been devoted to controlling their surface conduction, limited work has been focused on tuning surface states and bulk carriers in Bi 2Te 3 nanostructures by external field. Here we report gate-tunable surface conduction in Na-doped Bi 2Te 3 topological insulator nanoplates. Significantly, by applying external gate voltages, such topological insulators can be tuned from p-type to n-type. Our results render a promise in finding novel topological insulators with enhanced surface states. |
Keywords | bismuth telluride; field-effect transistor; sodium doping; surface states; topological insulator; bismuth telluride; bulk carrier; carrier transport process; device application; enhanced surface; external fields; gate voltages; Na doped; nanoplates; P-type; spintronic device; surface conduction; time reversal symmetries; topological insulators; alkali metals; electric components and equipment; semiconductor devices and integrated circuits; applied physics generally; high energy physics; nuclear physics; plasma physics |
ANZSRC Field of Research 2020 | 401699. Materials engineering not elsewhere classified |
519999. Other physical sciences not elsewhere classified | |
340399. Macromolecular and materials chemistry not elsewhere classified | |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Zhejiang University, China |
University of California, United States | |
University of Queensland | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q418q/gate-controlled-surface-conduction-in-na-doped-bi2te3-topological-insulator-nanoplates
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