Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance
Article
Article Title | Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance |
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ERA Journal ID | 41997 |
Article Category | Article |
Authors | Zou, Yi-Chao (Author), Chen, Zhi-Gang (Author), Kong, Fantai (Author), Zhang, Enze (Author), Drennan, John (Author), Cho, Kyeongjae (Author), Xiu, Faxian (Author) and Zou, Jin (Author) |
Journal Title | Nanoscale |
Journal Citation | 8 (46), pp. 19383-19389 |
Number of Pages | 7 |
Year | 2016 |
Publisher | The Royal Society of Chemistry |
Place of Publication | United Kingdom |
ISSN | 2040-3364 |
2040-3372 | |
Digital Object Identifier (DOI) | https://doi.org/10.1039/c6nr07140f |
Web Address (URL) | http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR07140F#!divAbstract |
Abstract | The rational design of semiconductor nanocrystals with well-defined surfaces is a crucial step towards the realization of next-generation photodetectors, and thermoelectric and spintronic devices. SnTe nanocrystals, as an example, are particularly attractive as a type of topological crystalline insulator, where surface facets determine their surface states. However, most of the available SnTe nanocrystals are dominated by thermodynamically stable {100} facets, and it is challenging to grow uniform nanocrystals with {111} facets. In this study, guided by surface-energy calculations, we employ a chemical vapour deposition approach to fabricate Bi doped SnTe nanostructures, in which their surface facets are tuned by Bi doping. The obtained Bi doped SnTe nanoribbons with distinct {111} surfaces show a weak antilocalization effect and linear magnetoresistance under high magnetic fields, which demonstrate their great potential for future spintronic applications. |
Keywords | chemical vapor deposition; interfacial energy; magnetoelectronics; magnetoresistance; nanocrystals; nanoribbons; semiconductor devices; semiconductor doping; chemical vapour deposition; crystalline insulators; high magnetic fields; linear magnetoresistance; semiconductor nanocrystals; spintronic applications; thermodynamically stable; weak antilocalization; narrow band gap semiconductors |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | University of Queensland |
University of Texas at Dallas, United States | |
Fudan University, China | |
Institution of Origin | University of Southern Queensland |
Funding source | Australian Research Council (ARC) |
https://research.usq.edu.au/item/q3y10/surface-energy-engineered-bi-doped-snte-nanoribbons-with-weak-antilocalization-effect-and-linear-magnetoresistance
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