Arrayed van der waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy
Article
Article Title | Arrayed van der waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy |
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ERA Journal ID | 1369 |
Article Category | Article |
Authors | Yuan, Xiang (Author), Tang, Lei (Author), Liu, Shanshan (Author), Wang, Peng (Author), Chen, Zhigang (Author), Zhang, Cheng (Author), Liu, Yanwen (Author), Wang, Weiyi (Author), Zou, Yichao (Author), Liu, Cong (Author), Guo, Nan (Author), Zou, Jin (Author), Zhou, Peng (Author), Hu, Weida (Author) and Xiu, Faxian (Author) |
Journal Title | Nano Letters: a journal dedicated to nanoscience and nanotechnology |
Journal Citation | 15 (5), pp. 3571-3577 |
Number of Pages | 6 |
Year | 2015 |
Place of Publication | United States |
ISSN | 1530-6984 |
1530-6992 | |
Digital Object Identifier (DOI) | https://doi.org/10.1021/acs.nanolett.5b01058 |
Web Address (URL) | http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b01058 |
Abstract | Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly efficient photodetector arrays were fabricated, based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust, with a response time of 60 μs. Importantly, the device shows no sign of degradation after 1 million cycles of operation. We also carried out numerical simulations to understand the underlying device working principles. Our study establishes a new approach to produce controllable, robust, and large-area 2D heterostructures and presents a crucial step for further practical applications. |
Keywords | 2D materials; GaSe; molecular beam epitaxy; p-n junctions; photodiodes; van der Waals heterostructure; atomically sharp interface; external quantum efficiency; GaSe; P-n junction; photo detector array; rectifying characteristics; two Dimensional (2 D); Van der waals; single element semiconducting materials; semiconductor devices and integrated circuits; optical communication equipment; optical devices and systems; coatings and finishes; atomic and molecular physics; fluidex |
ANZSRC Field of Research 2020 | 340305. Physical properties of materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Fudan University, China |
Chinese Academy of Sciences, China | |
University of Queensland | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q415v/arrayed-van-der-waals-vertical-heterostructures-based-on-2d-gase-grown-by-molecular-beam-epitaxy
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