Atomic disorders in layer structured topological insulator SnBi2Te4 nanoplates
Article
Article Title | Atomic disorders in layer structured topological insulator SnBi2Te4 nanoplates |
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ERA Journal ID | 123989 |
Article Category | Article |
Authors | Zou, Yi-Chao (Author), Chen, Zhi-Gang (Author), Zhang, Enze (Author), Kong, Fantai (Author), Lu, Yan (Author), Wang, Lihua (Author), Drennan, John (Author), Wang, Zhongchang (Author), Xiu, Faxian (Author), Cho, Kyeongjae (Author) and Zou, Jin (Author) |
Journal Title | Nano Research |
Journal Citation | 11 (2), pp. 696-706 |
Number of Pages | 11 |
Year | 2018 |
Publisher | Springer |
Place of Publication | China |
ISSN | 1998-0000 |
1998-0124 | |
Digital Object Identifier (DOI) | https://doi.org/10.1007/s12274-017-1679-z |
Web Address (URL) | https://link.springer.com/article/10.1007%2Fs12274-017-1679-z |
Abstract | Identification of atomic disorders and their subsequent control has proven to be a key issue in predicting, understanding, and enhancing the properties of newly emerging topological insulator materials. Here, we demonstrate direct evidence of the cation antisites in single-crystal SnBi2Te4 nanoplates grown by chemical vapor deposition, through a combination of sub-angstrom-resolution imaging, quantitative image simulations, and density functional theory calculations. The results of these combined techniques revealed a recognizable amount of cation antisites between Bi and Sn, and energetic calculations revealed that such cation antisites have a low formation energy. The impact of the cation antisites was also investigated by electronic structure calculations together with transport measurement. The topological surface properties of the nanoplates were further probed by angle-dependent magnetotransport, and from the results, we observed a two-dimensional weak antilocalization effect associated with surface carriers. Our approach provides a pathway to identify the antisite defects in ternary chalcogenides and the application potential of SnBi2Te4 nanostructures in next-generation electronic and spintronic devices. |
Keywords | metal chalcogenide; antisite defect; nanoplate; scanning transmission electron microscopy; magnetotransport |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | University of Queensland |
Centre for Future Materials | |
Fudan University, China | |
University of Texas at Dallas, United States | |
Beijing University of Technology, China | |
Tohoku University, Japan | |
Institution of Origin | University of Southern Queensland |
Funding source | Australian Research Council (ARC) |
https://research.usq.edu.au/item/q4979/atomic-disorders-in-layer-structured-topological-insulator-snbi2te4-nanoplates
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