Identification of embedded nanotwins at c-Si/a-Si:H interface limiting the performance of high-efficiency silicon heterojunction solar cells

Article

Qu, Xianlin, He, Yongcai, Qu, Minghao, Ruan, Tianyu, Chu, Feihong, Zheng, Zilong, Ma, Yabin, Chen, Yuanping, Ru, Xiaoning, Xu, Xixiang, Yan, Hui, Wang, Lihua, Zhang, Yongzhe, Hao, Xiaojing, Hameiri, Ziv, Chen, Zhi-Gang, Wang, Lianzhou and Zheng, Kun. 2021. "Identification of embedded nanotwins at c-Si/a-Si:H interface limiting the performance of high-efficiency silicon heterojunction solar cells." Nature Energy. 6 (2), pp. 194-202. https://doi.org/10.1038/s41560-020-00768-4
Article Title

Identification of embedded nanotwins at c-Si/a-Si:H interface limiting the performance of high-efficiency silicon heterojunction solar cells

ERA Journal ID211130
Article CategoryArticle
AuthorsQu, Xianlin, He, Yongcai, Qu, Minghao, Ruan, Tianyu, Chu, Feihong, Zheng, Zilong, Ma, Yabin, Chen, Yuanping, Ru, Xiaoning, Xu, Xixiang, Yan, Hui, Wang, Lihua, Zhang, Yongzhe, Hao, Xiaojing, Hameiri, Ziv, Chen, Zhi-Gang, Wang, Lianzhou and Zheng, Kun
Journal TitleNature Energy
Journal Citation6 (2), pp. 194-202
Number of Pages10
Year2021
PublisherNature Publishing Group
Place of PublicationUnited Kingdom
ISSN2058-7546
Digital Object Identifier (DOI)https://doi.org/10.1038/s41560-020-00768-4
Web Address (URL)https://www.nature.com/articles/s41560-020-00768-4
Abstract

The interface of high-quality crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) is indispensable for achieving the ideal conversion efficiency of Si heterojunction solar cells. Therefore, it is extremely desirable to characterize and control the interface at the atomic scale. Here, we employ spherical aberration-corrected transmission electron microscopy to investigate the atomic structure of the c-Si/a-Si:H interface in high-efficiency Si heterojunction solar cells. Their structural evolution during in situ annealing is visualized at the atomic scale. High-density embedded nanotwins, detrimental to the device performance, are identified in the thin epitaxial layer between c-Si and a-Si:H. The nucleation and formation of these nanotwins are revealed via ex situ and in situ high-resolution transmission electron microscopy. Si heterojunction solar cells with low-density nanotwins are fabricated by introducing an ultra-thin intrinsic a-Si:H buffer layer and show better performance, indicating that the strategy to restrain embedded nanotwins can further enhance the conversion efficiency of Si heterojunction solar cells.

KeywordsCrystalline silicons; Device performance; Silicon heterojunctions; In-situ annealing; Heterojunction solar cells; Spherical aberrations
Contains Sensitive ContentDoes not contain sensitive content
ANZSRC Field of Research 2020400402. Chemical and thermal processes in energy and combustion
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Byline AffiliationsBeijing University of Technology, China
Hanergy Chengdu Research and Development Center, China
Jiangsu University, China
University of New South Wales
Centre for Future Materials
University of Queensland
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