Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives
Article
Article Title | Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives |
---|---|
ERA Journal ID | 3713 |
Article Category | Article |
Authors | Zou, Chunli (Author), Pan, Guoshun (Author), Shi, Xiaolei (Author), Gong, Hua (Author) and Zhou, Yan (Author) |
Journal Title | Proceedings of the Institution of Mechanical Engineers Part J: Journal of Engineering Tribology |
Journal Citation | 228 (10), pp. 1144-1150 |
Number of Pages | 7 |
Year | 2014 |
Place of Publication | United Kingdom |
ISSN | 1350-6501 |
Abstract | For chemical-mechanical polishing of epitaxial gallium nitride (GaN), a two-step experiment method with two kinds of abrasives, aluminum oxide (Al2O3) and colloidal silica (SiO2), was put forward. The average material removal rates of GaN by the slurry with Al2O3 and SiO2 abrasives were 594.79 and 66.88 nm/h, respectively. An atomically flat surface with roughness (Ra) of 0.056 nm was obtained after the second chemical-mechanical polishing process with SiO2-based slurry, which presented an atomic step-terrace structure. The material removal characteristics of GaN surfaces were investigated in detail. A model was proposed to describe the different behaviors of the two kinds of abrasive during chemical-mechanical polishing process. |
Keywords | GaN, chemical mechanical polishing, surface roughness, removal rate |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Tsinghua University, China |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5w1x/atomically-smooth-gallium-nitride-surface-prepared-by-chemical-mechanical-polishing-with-different-abrasives
103
total views9
total downloads0
views this month0
downloads this month