Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
Article
Article Title | Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers |
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ERA Journal ID | 3721 |
Article Category | Article |
Authors | Zhou, Yan (Author), Pan, Guoshun (Author), Shi, Xiaolei (Author), Zhang, Suman (Author), Gong, Hua (Author) and Luo, Guihai (Author) |
Journal Title | Tribology International |
Journal Citation | 87, pp. 145-150 |
Number of Pages | 6 |
Year | 2015 |
Publisher | Elsevier |
Place of Publication | United Kingdom |
ISSN | 0301-679X |
1879-2464 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.triboint.2015.02.013 |
Abstract | Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over the surface via AFM. However, the variations of atomic step widths and step directions are different on the whole of different wafer surfaces: that on sapphire wafer are uniform, while that on SiC wafer are distinct. The effects of atomic step width on removal rate are studied. Removal model of super-hard wafer to realize atomically ultra-smooth surface is proposed. The variations of atomic step morphology toward different defects on sapphire and SiC wafers surface are analyzed, and the formation mechanism is discussed. |
Keywords | chemical mechanical polishing; sapphire; silicon carbide; atomic step |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Tsinghua University, China |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5w11/effects-of-ultra-smooth-surface-atomic-step-morphology-on-chemical-mechanical-polishing-cmp-performances-of-sapphire-and-sic-wafers
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