Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)
Article
Article Title | Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1) |
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ERA Journal ID | 1087 |
Article Category | Article |
Authors | Shi, Xiaolei (Author), Pan, Guoshun (Author), Zhou, Yan (Author), Gu, Zhonghua (Author), Gong, Hua (Author) and Zou, Chunli (Author) |
Journal Title | Applied Surface Science |
Journal Citation | 307, pp. 414-427 |
Number of Pages | 14 |
Year | 2014 |
Publisher | Elsevier |
Place of Publication | Amsterdam, Netherlands |
ISSN | 0169-4332 |
1873-5584 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.apsusc.2014.04.048 |
Abstract | In this paper, a detailed analysis is presented to characterize the performance of colloidal silica abrasives based slurry with different abrasive sizes on CMP of hexagonal 4H-SiC wafer, and indicates that the abrasive size is an important factor to determine the efficiency of CMP and the final planarization quality of wafer surface. The authors also present a detailed hypothesis to describe the material removal mechanism of 4H-SiC by colloidal silica abrasives during CMP process, and design two groups of experiments to demonstrate the rationality of the hypothesis. Furthermore, the authors put forward some suggestions to optimize the CMP efficiency and planarization quality of 4H-SiC wafer. |
Keywords | silicon carbide; chemical–mechanical polishing; colloidal silica abrasives; step-terrace structure; material removal mechanism |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Tsinghua University, China |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5w1y/characterization-of-colloidal-silica-abrasives-with-different-sizes-and-their-chemical-mechanical-polishing-performance-on-4h-sic-0-0-0-1
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