Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films
Article
Zhang, Linxing, Chen, Jun, Zhao, Hanqing, Fan, Longlong, Rong, Yangchun, Deng, Jinxia, Yu, Ranbo and Xing, Xianran. 2013. "Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films." Applied Physics Letters. 103 (8). https://doi.org/10.1063/1.4819205
| Article Title | Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films |
|---|---|
| ERA Journal ID | 949 |
| Article Category | Article |
| Authors | Zhang, Linxing (Author), Chen, Jun (Author), Zhao, Hanqing (Author), Fan, Longlong (Author), Rong, Yangchun (Author), Deng, Jinxia (Author), Yu, Ranbo (Author) and Xing, Xianran (Author) |
| Journal Title | Applied Physics Letters |
| Journal Citation | 103 (8) |
| Article Number | 082902 |
| Number of Pages | 5 |
| Year | 2013 |
| Publisher | AIP Publishing |
| Place of Publication | United States |
| ISSN | 0003-6951 |
| 1077-3118 | |
| Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4819205 |
| Web Address (URL) | http://aip.scitation.org/doi/pdf/10.1063/1.4819205 |
| Abstract | Ferroelectric property stability against elevated temperature is significant for ferroelectric film applications, such as non-volatile ferroelectric random access memories. The high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films show the temperature-independent ferroelectric properties, which were fabricated on Pt(111)/Ti/SiO2/Si substrates via sol-gel method. The present thin films were well crystallized in a phase-pure perovskite structure with a high (100) orientation and uniform texture. A remanent polarization (2Pr) of 77 μC cm-2 and a local effective piezoelectric coefficient d33* of 60 pm/V were observed in the 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films. It is interesting to observe a behavior of temperature-independent ferroelectric property in the temperature range of room temperature to 125°C. The remanent polarization, coercive field, and polarization at the maximum field are almost constant in the investigated temperature range. Furthermore, the dielectric loss and fatigue properties of 0.2Bi(Mg 1/2Ti1/2)O3-0.8PbTiO3 thin films have been effectively improved by the Mn-doping. |
| Keywords | elevated temperature; fatigue properties; ferroelectric property; non-volatile ferroelectric random access memory; perovskite structures; piezoelectric coefficient; room temperature; temperature range; dielectric materials; semiconductor devices and integrated circuits; coating techniques |
| Contains Sensitive Content | Does not contain sensitive content |
| ANZSRC Field of Research 2020 | 510303. Electrostatics and electrodynamics |
| 400899. Electrical engineering not elsewhere classified | |
| Public Notes | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 103, 082902 (2013) and may be found at https://doi.org/10.1063/1.4819205. |
| Byline Affiliations | University of Science and Technology Beijing, China |
| University of Science and Technology of China, Hefei, China | |
| Institution of Origin | University of Southern Queensland |
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