Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films
Article
Article Title | Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films |
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ERA Journal ID | 949 |
Article Category | Article |
Authors | Zhang, Linxing (Author), Chen, Jun (Author), Zhao, Hanqing (Author), Fan, Longlong (Author), Rong, Yangchun (Author), Deng, Jinxia (Author), Yu, Ranbo (Author) and Xing, Xianran (Author) |
Journal Title | Applied Physics Letters |
Journal Citation | 103 (8), pp. 082902-1 |
Number of Pages | 5 |
Year | 2013 |
Place of Publication | United States |
ISSN | 0003-6951 |
1077-3118 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4819205 |
Web Address (URL) | http://aip.scitation.org/doi/pdf/10.1063/1.4819205 |
Abstract | Ferroelectric property stability against elevated temperature is significant for ferroelectric film applications, such as non-volatile ferroelectric random access memories. The high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films show the temperature-independent ferroelectric properties, which were fabricated on Pt(111)/Ti/SiO2/Si substrates via sol-gel method. The present thin films were well crystallized in a phase-pure perovskite structure with a high (100) orientation and uniform texture. A remanent polarization (2Pr) of 77 μC cm-2 and a local effective piezoelectric coefficient d33* of 60 pm/V were observed in the 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films. It is interesting to observe a behavior of temperature-independent ferroelectric property in the temperature range of room temperature to 125°C. The remanent polarization, coercive field, and polarization at the maximum field are almost constant in the investigated temperature range. Furthermore, the dielectric loss and fatigue properties of 0.2Bi(Mg 1/2Ti1/2)O3-0.8PbTiO3 thin films have been effectively improved by the Mn-doping. |
Keywords | elevated temperature; fatigue properties; ferroelectric property; non-volatile ferroelectric random access memory; perovskite structures; piezoelectric coefficient; room temperature; temperature range; dielectric materials; semiconductor devices and integrated circuits; coating techniques |
ANZSRC Field of Research 2020 | 510303. Electrostatics and electrodynamics |
400899. Electrical engineering not elsewhere classified | |
Public Notes | File reproduced in accordance with the copyright policy of the publisher/author. |
Byline Affiliations | University of Science and Technology Beijing, China |
University of Science and Technology of China, China | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q427w/temperature-independent-ferroelectric-property-and-characterization-of-high-tc-0-2bi-mg1-2ti1-2-o3-0-8pbtio3-thin-films
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