Large remanent polarization and small leakage in sol-gel derived Bi(Zn 1/2Zr1/2)O3-PbTiO3 ferroelectric thin films
Article
Article Title | Large remanent polarization and small leakage in sol-gel derived Bi(Zn 1/2Zr1/2)O3-PbTiO3 ferroelectric thin films |
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ERA Journal ID | 1539 |
Article Category | Article |
Authors | Zhang, Linxing (Author), Chen, Jun (Author), Zhao, Hanqing (Author), Fan, Longlong (Author), Rong, Yangchun (Author), Deng, Jinxia (Author), Yu, Ranbo (Author) and Xing, Xianran (Author) |
Journal Title | Dalton Transactions: an international journal of inorganic chemistry |
Journal Citation | 42 (2), pp. 585-590 |
Number of Pages | 6 |
Year | 2013 |
Place of Publication | United Kingdom |
ISSN | 1477-9226 |
1477-9234 | |
Digital Object Identifier (DOI) | https://doi.org/10.1039/c2dt31996a |
Web Address (URL) | http://pubs.rsc.org/en/Content/ArticleLanding/2013/DT/C2DT31996A#!divAbstract |
Abstract | The applications of ferroelectric thin films such as the sensitivity of nonvolatile ferroelectric random access memories are closely linked with large remnant polarization. The high-TC (1-x)Bi(Zn1/2Zr 1/2)O3-xPbTiO3 (x = 0.7-0.9) thin films with high (100) orientation were fabricated on Pt(111)/Ti/SiO2/Si substrates via a sol-gel method. The thin films could be crystallized well in a phase-pure perovskite structure. The electrical properties of the sol-gel-derived BZZ-PT thin films were investigated. A large remanent polarization with 2Pr up to 110 μC cm-2 and a small leakage current of 3.8 × 10-7 A cm-2 under an electric field of 150 kV cm-1 are observed on the 0.2BZZ-0.8PT thin films. Furthermore, a relatively stable polarization fatigue property was achieved, indicating a potential application in high-temperature ferroelectric devices. |
Keywords | high temperature; High-T; non-volatile ferroelectric random access memories; Perovskite structures; polarization fatigue; potential applications; Pt thin films; Pt(111); remnant polarizations; coating techniques; inorganic compounds; chemical products generally; semiconductor devices and integrated circuits; dielectric materials; electricity, basic concepts and phenomena; Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium; Precious Metals; Zinc and Alloys |
ANZSRC Field of Research 2020 | 340607. Reaction kinetics and dynamics |
340399. Macromolecular and materials chemistry not elsewhere classified | |
400408. Reaction engineering (excl. nuclear reactions) | |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | University of Science and Technology Beijing, China |
University of Science and Technology of China, Hefei, China | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q4281/large-remanent-polarization-and-small-leakage-in-sol-gel-derived-bi-zn-1-2zr1-2-o3-pbtio3-ferroelectric-thin-films
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